Dry etching process for compound semiconductors

Details Dry etching process for compound semiconductors Dry etching process for compound semiconductors

2007-08-28

2007-08-28

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S718000

Reexamination Certificate

active

10782723

ABSTRACT:
Accordingly, this invention relates to an dry etching process for semiconductor wafers. More particularly, the present invention discloses a dry etching process including a halogen etchant (24) and a nitrogen gas (28) that selectively etches a compound semiconductor material (18) faster than the front-side metal layers (16A)(16B). Further, the dry etching process produces a vertical wall profile on compound semiconductor material (18) in both X (38) and Y (40) crystalline directions without undercutting the top of a via-opening.

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