Dry etching process

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156646, 156651, 156657, 1566591, 156662, 156667, 156904, 20419232, 427 431, 430313, H01L 21306, B44C 122, C03C 1500, C03C 2506

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active

046344950

ABSTRACT:
In a dry etching process for patterning a substrate (2), an etching mask (4) consisting of a chemically deposited oxide, for example Al.sub.2 O.sub.3, is used and the etching is carried out in a fluorine-containing plasma. By this means, etching selectivities of more than 100 are achieved for a substrate (2) of silicon.

REFERENCES:
patent: 4132586 (1979-01-01), Schaible et al.
patent: 4288283 (1981-09-01), Umezaki et al.
patent: 4502916 (1985-03-01), Umezaki et al.

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