Dry etching process

Details Dry etching process Dry etching process

1987-03-05

1988-11-22

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156662, 156664, 156345, 427 47, 20419232, 204298, B44C 122

Patent

active

047863617

ABSTRACT:
A process is disclosed which etches a workpiece, with an etching mask of a predetermined pattern formed on the surface of the workpiece, on an apparatus which includes a container for holding first and second electrodes opposite to each other and a magnetic field generator arranged on a side opposite to that side of the second electrode where the second electrode faces the first electrode, which comprises placing the workpiece on the first electrode, supplying a feed gas into the container, evacuating air in the container to set pressure in the container at a level of 10.sup.-2 torrs, and applying high frequency power across the first and second electrodes to yield plasma whereby the workpiece is etched.

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patent: 4331486 (1982-05-01), Chenevas-Paule et al.
patent: 4399014 (1983-08-01), Engle
patent: 4464223 (1984-08-01), Gorin
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patent: 4600492 (1986-07-01), Ooshio et al.
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patent: 4632718 (1986-12-01), Chow et al.
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patent: 4668337 (1987-05-01), Sekine et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4668365 (1987-05-01), Foster et al.
J. Vac. Sci. Technol. B3, 16, 1985; Pattern profile control of polysilicon plasma etching; M. Kimizuka and K. Hirata
Proceedings of the Symposium on Dry Process, Tokyo; Oct. 1982, Characteristics of SiO.sub.2 Reactive Sputter Etching Using Magnetic Field; Kado Hirobe et al.

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