Dry etching procedure

Details Dry etching procedure Dry etching procedure

1988-01-19

1988-11-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 156649, 156648, 20419237, 252 791, 437225, 427 38, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

047847190

ABSTRACT:
The presence of material deposited on the sidewall during device fabrication utilizing plasma-effected etching of semiconductor materials has significant consequences in the properties of these devices. It has been found that such depositions lead to a sidewall slope that, among other things, in turn produces linewidth loss. Additionally, the presence of a sloped masking material, e.g., a photoresist or sidewall deposit, produces further undesirable results.

REFERENCES:
patent: 4208241 (1980-06-01), Harshbarger et al.
patent: 4446613 (1984-05-01), Beinglass et al.
patent: 4471525 (1984-09-01), Sasaki
patent: 4484979 (1984-11-01), Stocker
patent: 4542577 (1985-09-01), Jackson
patent: 4561907 (1985-12-01), Raicu

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