Dry etching patterning of electrical and optical materials

Details Dry etching patterning of electrical and optical materials Dry etching patterning of electrical and optical materials

1987-07-13

1988-03-29

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 156662, 156345, 20419232, 204298, H01L 21306, C23F 102, B44C 122, C03C 1500

Patent

active

047341521

ABSTRACT:
A new anisotropic dry etching system using a hot jet tube to heat and dissociate non-reactive source gas to form a directed flux of reactive specie or radicals for etching materials through openings in a resist or a reusable stencil of SiN.sub.x wherein x is in the range of 1.5 to 0.5. Si and GaAs may be etched using Cl.sub.2, F.sub.3, Br.sub.2 or SF.sub.6 source gasses. Pb or Hg, Cd, Te may be etched using n-butane, dimethyl ether or acetone as a source gas for CH.sub.3 radicals. The tube may be formed of tungsten or where fluorine is used as a source gas, an irridium tube is preferred. Alternatively, a tube formed of rhenium or an alloy of rhenium and tungsten is preferred for some applications.

REFERENCES:
patent: 4233109 (1980-11-01), Nishizawa
patent: 4522674 (1985-06-01), Ninomiya et al.
patent: 4661203 (1987-04-01), Smith et al.
"Hot Jet Etching of GaAs and Si", M. W. Geis et al., distributed at Electronic Photon and Ion Beam Conference, Jun. 1985.
Coburn et al., "Directional Etching with XeF.sub.2 and Other Active Gases", IBM Tech. Discl. Bulletin, vol. 22, No. 4, Sep. 1979, p. 1640.
Geis et al., "Hot Jet Etching of GaAs and Si"; J. Vac. Sci. Technol. B4(1), Jan./Feb. 1986, pp. 315-317.

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