Dry etching of transparent electrodes in a low pressure plasma r

Details Dry etching of transparent electrodes in a low pressure plasma r Dry etching of transparent electrodes in a low pressure plasma r

1996-06-28

1997-09-16

Breneman, R. Bruce

Etching a substrate: processes

Forming or treating electrical conductor article

216 76, 216 63, 156345, 438 22, B01J 1500, C23F 102

Patent

active

056676310

ABSTRACT:
A method for dry etching an indium tin oxide (ITO) layer disposed above a substrate in a low pressure plasma reactor is disclosed. The method includes a step of placing a substrate having the ITO layer into the low pressure plasma reactor, a step of introducing an etchant gas into the low pressure plasma reactor; a step of striking a plasma from the etchant gas in the low pressure plasma reactor; and a step of etching the ITO layer with the plasma.

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