Dry etching of silicon carbide

Details Dry etching of silicon carbide Dry etching of silicon carbide

1989-09-06

1991-01-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 20419237, 252 791, 437228, 437234, B44C 122, C03C 1500, C23F 102, H01L 21306

Patent

active

049815512

ABSTRACT:
The invention comprises a method of etching a silicon carbide target. In one embodiment, a reactive ion plasma is formed from a gas which is easily dissociated into its elemental species in the plasma, for which all of the dissociated elemental species are volatile in the plasma, and for which at least one of the elemental species is reactive with silicon carbide. The silicon carbide target to be etched is positioned on one of the electrodes which is formed from a material with a low sputter yield and which material reacts with a dissociated species to thereby prevent contamination of the target with either sputtered materials from the electrode or polymerized species from the plasma.

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patent: 4865685 (1989-09-01), Palmour
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