Dry etching of silicon carbide

Details Dry etching of silicon carbide Dry etching of silicon carbide

1987-11-03

1989-09-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 20419237, 252 791, 437228, 437234, B44C 122, C03C 1500, C23F 102, H01L 21306

Patent

active

048656852

ABSTRACT:
The invention comprises a method of etching silicon carbide targets. In one embodiment, a reactive ion plasma is formed from a gas which is easily dissociated into its elemental species in the plasma, for which all of the dissociated elemental species are volatile in the plasma, and for which at least one of the elemental species is reactive with silicon carbide. The silicon carbide target to be etched is positioned on one of the electrodes which is formed from a material with a low sputter yield and which material reacts with a dissociated species to thereby prevent contamination of the target with either sputtered materials from the electrode or polymerized species from the plasma.

REFERENCES:
patent: 3398033 (1968-08-01), Haga et al.
patent: 4351894 (1982-09-01), Yonezawa et al.
patent: 4560642 (1985-12-01), Yonezawa et al.
patent: 4595453 (1986-06-01), Yamazaki et al.
patent: 4735920 (1988-04-01), Stephani et al.
Surface Characteristics of Monocrystalline B-SiC Dry Etched in Fluorinated Gases; Palmour et al; NCSU, Raleigh N.C., and Paul Blackborow, Plasma Technology Ltd., England.
Thermal Oxidation of Sputtered Silicon Carbide Thin Films; W.-J. Lu et al; J. Electrochem. Soc.: Solid-State Science and Technology; 8-84, pp. 1907, 1912-1913.
Dry Etching of B-SiC in CF.sub.4 and CF.sub.4 +O.sub.2 Mixtures; Palmour et al; J. Vac. Sci. Technol. A, vol. 4, No. 3; May/Jun. 1986, pp. 590-593.
Surface Characteristics of Monocrystalline B-SiC Dry Etched in Fluorinated Gases; Palmour et al; Mat. Res. Soc. Symp. Proc., vol. 76, 1987, pp. 185-190.
The Etching of a-Silicon Carbide; Brander et al; Brit. J. Appl. Phys. 1967, vol. 18, pp. 905-912.
Selectively Etching Semiconductor Material; E. Biedermann; IBM Technical Disclosure Bulletin; vol. 9, No. 2, Jul. 1966, pp. 213-214.

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