Dry etching of metal film

Details Dry etching of metal film Dry etching of metal film

1980-07-31

1982-09-21

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 156656, 1566591, 156665, 156667, 204192E, 252 791, C23F 102

Patent

active

043505635

ABSTRACT:
A process for dry etching an aluminum film or an aluminum based film in the production of a semiconductor device, wherein a mixed gas of carbon chloride and boron chloride is used as the etchant gas.

REFERENCES:
patent: 3971684 (1976-07-01), Muto
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4030967 (1977-06-01), Ingrey et al.
Technical Digest 1976, International Electron Devices Meeting, Dec. 6, 7, and 8, 1976, Washington D.C., Plasm Etching of Aluminum by Poulsen et al., pp. 205-208.
J. Vac. Sci. Technol. 15(2) Mar./Apr. 1978, Reactive Ion Etching of Aluminum and Aluminum Alloys in an rf Plasma Containing Halogen Species by P. M. Schaible et al., pp. 334-337.

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