Dry etching of layer structure oxides

Details Dry etching of layer structure oxides Dry etching of layer structure oxides

1995-02-22

1999-02-23

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 216 67, H01L 2100

Patent

active

058739777

ABSTRACT:
A method of patterning layered structure oxide thin films involving placing the layered structure thin film (with or without a mask) laid on a substrate into a chamber which is partially filled with CHC1FCF.sub.3 gas and producing a glow discharge to cause the etching of the thin film ferroelectric material. The method provides high etch rates, good etch anisotropy and good etch uniformity. For example, for SBT and SBN thin films, the etch process provides etch rates in the range of 2.5 to 17.5 nm/min depending on the etch conditions and minimal etch residues at the end of the etch process is removed easily by low temperature (250.degree. C.) baking. Also, the method provides good etch selectivity in the films and minimal surface damage.

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patent: 5368687 (1994-11-01), Sandhu et al.
patent: 5468342 (1995-11-01), Nulty et al.
E.C. Subbarao, J. Phys. Chem. Solids vol. 23, 1962, p. 665.

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