Dry etching method utilizing (SN).sub.x polymer mask

Details Dry etching method utilizing (SN).sub.x polymer mask Dry etching method utilizing (SN).sub.x polymer mask

1992-06-03

1994-07-05

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156662, 156665, 1566611, 156656, 156657, H01L 2100

Patent

active

053264312

ABSTRACT:
A dry etching method using no organic resist mask without involving an increase in the number of necessary processes or wafer surface steps. Conventionally, a nitrogen based compound film is formed as a thin anti-reflection film on a gate electrode or aluminum (Al) metallization layer. The nitrogen based compound film thus formed can be used as an etching mask for the material layer by using etching gas capable of forming sulfur (S) in a plasma when dissociated by electric discharges. For instance, a W polycide film masked by a TiON anti-reflection film patterned into a predetermined shape can be etched by S.sub.2 F.sub.2 /H.sub.2 mixed gas. In this case, a nitrogen (N) dangling bond formed on the surface of the TiON anti-reflection film combines with sulfur supplied by S.sub.2 F.sub.2 to form a polythiazyl (SN).sub.x coating, which provides the resulting TiON anti-reflection film pattern with a sufficient etching resistance to act as an etching mask. This etching process emits no carbon to the etching system, thus improving selectivity for a SiO.sub.2 based material layer. The TiON anti-reflection film pattern can also be used as an etching mask for an aluminum metallization layer with a view to reducing after-corrosion.

REFERENCES:
patent: 4330384 (1982-05-01), Okudaira et al.
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4713141 (1987-12-01), Tsang
patent: 4975144 (1990-12-01), Yamazaki et al.
"D.C. Plasma Etching of Silicon By Sulfur Hexafluoride. Mass Spectrometric Study of The Discharge Products"; Wagner et al.; 1981; abstract only; Plasma Chem. Proc. 1(2), U.S.A.
Nakamura et al, "Very High Selective n+ poly Si RIE with Carbon Elimination", Second Microprocess Conference, 1989, Digest of Papers, pp. 190-191.
Pelletier et al, "S.sub.2 Br.sub.2, S.sub.2 Cl.sub.2, S.sub.2 F.sub.2 : A New Line of Halogen-Containing Gases for Low-Pressure Plasma Etching Process", Japanese Journal of Applied Physics, vol. 29, No. 9, Sep. 8, 1990, pp. 1846-1853.

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