Dry etching method of thin film

Details Dry etching method of thin film Dry etching method of thin film

1998-08-04

2000-06-06

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

H01L 213065

Patent

active

060718218

ABSTRACT:
A dry etching method of a thin film comprising the steps of, forming a resist pattern on a thin film, performing a first etching wherein the thin film is selectively dry-etched under a first etching condition using the resist pattern as a mask, and performing a second etching wherein the thin film is selectively dry-etched under a second etching condition using the resist pattern as a mask, the second etching condition differing from the first etching condition, wherein changing from the first etching step to the second etching step is performed before the selective etching of the thin film is accomplished.

REFERENCES:
patent: 4886569 (1989-12-01), Ojha et al.
patent: 5702562 (1997-12-01), Wakahara
patent: 5783496 (1998-07-01), Flanner et al.

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