Dry etching method of GaAs

Details Dry etching method of GaAs Dry etching method of GaAs

1992-10-26

1994-12-06

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156651, 156652, 156656, H01L 2100

Patent

active

053707699

ABSTRACT:
A method of dry etching a GaAs/AlGaAs stacked system with high selectivity without employing a chlorofluorocarbon (CFC) gas. When selectively etching an n.sup.+ -GaAs layer stacked on an n.sup.+ -AlGaAs layer for forming e.g. a gate recess of a high electron mobility transistor (HEMT), a gas having a composition capable of yielding free sulfur (S) and fluorine radicals (F*) in a plasma under conditions of discharge dissociation is used as an etching gas. S is deposited on a pattern sidewall to form a sidewall protection film to contribute to anisotropic etching. On the other hand, F* plays the role of formation of AlF.sub.x with low vapor pressure on an exposed surface of the underlayer of n.sup.+ -AlGaAs to stop etching, to say nothing of a role of an etchant. Although a gas system which is by far the simplest is a mixed system of S.sub.2 F.sub.2 /Xe, a gas system may be employed which is capable of generating Cl* or Br* for producing a reaction product having a high vapor pressure or augmenting S deposition. More concretely, mixed systems of S.sub.2 F.sub.2 /Cl.sub.2, S.sub.2 F.sub.2 /S.sub.2 Cl.sub.2 or S.sub.2 Cl.sub.2 /ClF.sub.3 may be employed.

REFERENCES:
"Damage Studies of Dry Etched Gallium Arsenide Recessed Gates For Field Effect Transistors", J. Vac. Sci., B; 9(1) pp. 114-119, 1991, Salimian et al.
"Reactive Ion Etch Process With Highly Controllable Gallium Arsenide To Aluminum Gallium Arsenide Selectivity Using Sulfur Hexafluoride and Silicon Tetrachloride", Salimia et al., Appl. Phys. Lett. 51(14), Abstract Only, 1987.
"Damage Studies of Dry Etched Gallium Arsenide Recessed Gates For Field Effect Transistors", J. Vac. Sci. Tech., B; 9(1); 1991; pp. 114-119.
"Selective Dry Etching of In GaAs and InP over A/InAs in CH.sub.4, H.sub.2, SF.sub.6 ", Appl. Phys. Lett.; 56 (22); pp. 2186-2188; May 1990; Pearton et al.
"D.C. Plasma Etching of Silicon by Sulfur Hexafluoride . . . "; Wagner et al.; Plasma Chem. Plasma Process., 1(2), Abstract Only; 1981.
Saliman et al, "Reactive ion etch process with highly controllable GaAs-to-AlGaAs selectivity using SF.sub.6 and SiCl.sub.4 ", Applied Physics Letters, vol. 51, No. 14, 5 Oct. 1987, pp. 1083-1085.
Pelletier et al, "S.sub.2 Br.sub.2, S.sub.2 Cl.sub.2, S.sub.2 F.sub.2 : A New Line of Halogen-Containing Gases for Low-Pressure Plasma Ethcing Processes", Japanese Journal of Applied Physics, vol. 29, No. 9, Sep. 1990, pp. 1846-1853.
Salimian et al, "Selective dry etching of GaAs over AlGaAs in SF.sub.6 /SiCl.sub.4 mixtures", Journal of Vacuum Science & Technology B, vol. 6, No. 6, Dec. 1988, pp. 1641-1644.
Hikosaka et al, "Selective Dry Etching of AlGaAs-GaAs Heterojunction", Japanese Journal of Applied Physics, vol. 20, No. 11, Nov. 1981, pp. L847-L850.

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