Dry etching method of copper or copper alloy interconnection lay

Details Dry etching method of copper or copper alloy interconnection lay Dry etching method of copper or copper alloy interconnection lay

1992-04-21

1993-08-31

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 437190, 437192, 437245, C23F 102, H01L 2144

Patent

active

052405591

ABSTRACT:
The present invention is mainly characterized by obtaining a dry etching method which is improved to obtain a copper interconnection pattern with high dimensional accuracy. A resist pattern is formed on a copper interconnection layer formed on a substrate. Using the resist pattern as a mask, the copper interconnection layer is etched with plasma of an iodine type compound selected from the group consisting of HI, I.sub.2, BI.sub.3 and SiI.sub.4.

REFERENCES:
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4557796 (1985-12-01), Druschke et al.
patent: 5100499 (1992-03-01), Douglas
Cuomo et al., "Reactive Ion Etching of Copper"; IBM Tech. Disclosure Bulletin, vol. 25, No. 12, May 1983; pp. 6394.

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