Dry etching method of compound semiconductor

Details Dry etching method of compound semiconductor Dry etching method of compound semiconductor

1984-10-26

1987-02-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 1566591, 156662, 156345, 20419232, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046407375

ABSTRACT:
A compound semiconductor is dry-etched by introducing a plasma-generating gas comprising boron trichloride and chlorine into a plasma generation region which is defined between a cathode for supporting a workpiece comprising a compound semiconductor and an anode opposite thereto. High-frequency electric power is applied between the cathode and the anode, thereby generating a plasma from the introduced plasma-generating gas. The compound semiconductor is etched with the thus formed plasma.

REFERENCES:
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patent: 4426246 (1984-01-01), Kravitz et al.
Proceeding of Int. Electron. Devices Meeting, Washington, D.C., Dec., (1976), 205; R. G. Poulsen et al.
Japanese Journal of Applied Physics, vol. 22, No. 10 (1983), L653; K. Asakawa et al.
Proceeding of Symposium on Dry Process (1982), 79; H. Nagasaka et al.
Processings of the International Symposium on Gallium Arsenide and Related Compounds, Vienna, AT, 22nd-24th 9/1980, pp. 267-273, The Institute of Physics, Bristol/London, GB; L. A. D'Asaro et al: "Plasma-Etched via Connections to GaAs FET's" *p. 268, paragraph 6-p. 269, paragraph 6*.
Patents Abstracts of Japan, vol. 7, No. 258 (E-211) [1403], 17th 11/1983; & JP--A--58 143 530 (Tokyo Shibaura Denki K.K.) 26-08-1983.
Extended Abstracts, vol. 83-1, May 1983, p. 546, Pennington, N.J., US; D. L. Flamm: "Plasma Etching of III-V Compounds" *paragraph 1,2*.
Solid State Technology, vol. 25, No. 4, Apr. 1982, pp. 160-165, Port Washington, N.Y. US; R. F. Reichelderfer: "Single Wafer Plasma Etching" *p. 160, col. 1, paragraph 3--col. 2, paragraph 2; p. 161, col. 2, paragraph 2--p. 163, col. 1, paragraph 2*.

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