Dry etching method for semiconductor substrate

Details Dry etching method for semiconductor substrate Dry etching method for semiconductor substrate

1997-12-17

2000-07-18

McDonald, Rodney G.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

134 11, 134 12, 134 13, 438723, 438905, 438906, H01H 21302

Patent

active

060907185

ABSTRACT:
After performing an etching process with respect to one substrate, the substrate is taken out from an etching chamber. Then, a dummy substrate is disposed in the etching chamber and a cleaning process is performed. The cleaning process includes a cleaning step for etching reaction products produced during the etching process to be removed, a seasoning step for adjusting the atmosphere within the etching chamber and the temperature of the substrate, and a purge step for removing suspended foreign materials without generating plasma. By performing the cleaning process, the successive etching process can be performed without generating any black silicon on the substrate, thereby attaining a high production yield.

REFERENCES:
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patent: 5423941 (1995-06-01), Komura et al.
patent: 5522966 (1996-06-01), Komura et al.
patent: 5647953 (1997-07-01), Williams et al.
patent: 5728602 (1998-03-01), Bellows et al.
patent: 5746928 (1998-05-01), Yen et al.
patent: 5810937 (1998-09-01), Gupta et al.

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