Dry etching method for semiconductor device

Details Dry etching method for semiconductor device Dry etching method for semiconductor device

2011-06-07

2011-06-07

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257S369000, C257SE21638, C438S183000

Reexamination Certificate

active

07955963

ABSTRACT:
The present invention provides a device having an N type polysilicon gate and a P type polysilicon gate disposed therein, wherein when both gates are simultaneously etched, they are disposed in such a manner that the area of a non-doped polysilicon gate corresponding to a dummy electrode becomes larger than the total area of the N type and P type doped polysilicon gates, thereby causing non-doped polysilicon to become dominant over doped polysilicon, whereby the polysilicon gates are dry-etched.

REFERENCES:
patent: 4989057 (1991-01-01), Lu
patent: 5116778 (1992-05-01), Haskell et al.
patent: 5637900 (1997-06-01), Ker et al.
patent: 5665203 (1997-09-01), Lee et al.
patent: 5783850 (1998-07-01), Liau et al.
patent: 5827761 (1998-10-01), Fulford et al.
patent: 5998247 (1999-12-01), Wu
patent: 6020240 (2000-02-01), Wu
patent: 6103603 (2000-08-01), Han
patent: 6117723 (2000-09-01), Huang
patent: 6175136 (2001-01-01), Okamura
patent: 6376294 (2002-04-01), Tzeng et al.
patent: 6429067 (2002-08-01), Liu et al.
patent: 6541359 (2003-04-01), Gabriel et al.
patent: 6605543 (2003-08-01), Zheng
patent: 6703269 (2004-03-01), Brown et al.
patent: 2003/0015763 (2003-01-01), Yoneda
patent: 11-204506 (1999-07-01), None
patent: 2000-058511 (2000-02-01), None
patent: 2000-164732 (2000-06-01), None

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