Dry etching method for semiconductor

Details Dry etching method for semiconductor Dry etching method for semiconductor

1989-04-17

1990-08-07

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156662, H01L 21306

Patent

active

049465481

ABSTRACT:
A dry etching method for Al.sub.x Ga.sub.1-x N(0.ltoreq.x.ltoreq.1) semiconductor is disclosed. The method includes a first method using plasma of carbon tetrachloride (CCl.sub.4) gas, and a second method using plasma of dichlorodifluoromethane (CCl.sub.2 F.sub.2) gas. The etching speed of the former method was 430 .ANG./min. and the etching speed of the latter method was 625 .ANG./min. Also, no crystal defect was produced in the above-mentioned semiconductor by the above-mentioned etching.

REFERENCES:
patent: 3984301 (1976-10-01), Matsuzaki et al.
patent: 4101411 (1978-07-01), Suzuki et al.
patent: 4635343 (1987-01-01), Kuroda
patent: 4640737 (1987-02-01), Nagasaka et al.
Smolinsky, Chang, Mayer: J. Vac. Technol., 18,12 (1981), "Plasma Etching of III-V Compound Semiconductor".
R. E. Klinger, J. E. Greene: J. Appl. Phys., 54,1595 (1983), "Reactive Ion Etching of GaAs in CCl.sub.4 -xFx(x=0,2,4) and Mixed CCl.sub.4 -xFx/Ar Discharges".
Jean Vatus et al.: IEEE Transactions on Electron Devices ED-33,934 (1986), "Highly Selective Reactive Ion Etching Applied to the Fabrication of Low-Noise AlGaAs GaAs FET's".
Alan Seabaugh: J. Vac. Technol., B6,77 (1988), "Selective Reactive Ion Etching of GaAs on AlGaAs Using CCl.sub.2 F.sub.2 and Lie".
K. Hikosaka et al.: Jpn. J. Appl. Phys., 20,L847 (1981), "Selective Dry Etching of AlGaAs-GaAs Heterojunction".
S. Salimian et al.: Appl. Phys. Lett. 51,1083 (1987), "Reactive Ion Etch Process with Highly Controllable GaAs-to-AlGaAs Selectivity Using SF.sub.4 and SiCl.sub.4 ".
S. J. Pearton et al.: J. Appl. Phys., 65,1281 (1989), "Reactive Ion Etching of GaAs with CCl.sub.2 F.sub.2 :O.sub.2 :Etch Rates, Surface Chemistry and Residual Damage".

Affiliated with

Also associated with

Rating

Dry etching method for semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching method for semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching method for semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-958764