Dry etching method for selectively etching silicon nitride exist

Details Dry etching method for selectively etching silicon nitride exist Dry etching method for selectively etching silicon nitride exist

1985-12-16

1987-03-31

Lindsay, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 156662, B44C 122

Patent

active

046541144

ABSTRACT:
A dry etching method for selectively etching a silicon nitride having the generic formula Si.sub.x N.sub.y existing over a base of SiO.sub.2 utilizing, as the etchant gas, a mixture of a fluorohydrocarbon in which the atomic ratio of F/C is smaller than 3:1, the mixture containing 30-70% of CO.sub.2 on a flow rate basis. The presence of such a large amount of CO.sub.2 in the etchant in combination with the particular fluorohydrocarbons is effective for enhancing the selective ratio of etching between Si.sub.x N.sub.y and SiO.sub.2 and also for preventing formation of obstructive polymers of fluorocarbons.

REFERENCES:
patent: 4381967 (1983-05-01), Sanders
patent: 4412119 (1983-10-01), Komatsu et al.
patent: 4431477 (1984-02-01), Zajac
patent: 4465552 (1984-08-01), Bobbio et al.
patent: 4511430 (1985-04-01), Chen et al.

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