Dry etching method for perovskite oxide film

Details Dry etching method for perovskite oxide film Dry etching method for perovskite oxide film

1992-09-17

1993-11-16

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156635, 156667, 252 791, B44C 122, C03C 1500, C03C 2506, C23F 100

Patent

active

052620018

ABSTRACT:
A dry etching method for perovskite oxide film includes introduction of a hydrogen gas and an acetylacetone- or n-butyl acetate gas into an electron cyclotron resonance plasma etching system simultaneously so as to etch a perovskite oxide film.

REFERENCES:
patent: 4759823 (1988-07-01), Asselanis et al.
patent: 5034086 (1991-07-01), Sato
patent: 5194119 (1993-03-01), Iwano et al.

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