Dry etching method for oxide semiconductor film

Details Dry etching method for oxide semiconductor film Dry etching method for oxide semiconductor film

2007-05-22

2011-10-11

Ahmed, Shamim (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

C438S706000

Reexamination Certificate

active

08034248

ABSTRACT:
Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate.

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