Dry etching method for organic material layers

Details Dry etching method for organic material layers Dry etching method for organic material layers

1983-11-16

1984-09-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156655, 1566591, 156668, 156345, 204192E, 204298, 252 791, B44C 122, C03C 1500, C03C 2506, B29C 1708

Patent

active

044734379

ABSTRACT:
A dry etching method for organic material layers is disclosed which utilizes a parallel plate electrode type plasma etching apparatus. An etching gas containing nitrogen as its primary constituent is introduced into the apparatus, and then the organic material layers are anisotropically etched by applying a high frequency electric power to the electrodes to produce a plasma.

REFERENCES:
patent: 4374699 (1983-02-01), Sanders et al.
patent: 4381967 (1983-05-01), Sanders et al.
M. Hatzakis, "Multilayer Resist Systems for Lithography", Solid State Technology, Aug. 1981, pp. 74-80.
J. Moran et al., "High Resolution, Steep Profile, Resist Patterns", The Bell System Technical Journal, vol. 58, No. 5, May-Jun. 1979, pp. 1026-1036.

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