Dry etching method for multilayer film

Details Dry etching method for multilayer film Dry etching method for multilayer film

1998-05-04

2000-07-18

Gupta, Yogendra

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438721, 438738, 438733, H01L 21302

Patent

active

060907193

ABSTRACT:
A dry etching method for a multilayer film is disclosed, which is capable of dry-etching a multilayer film such as a titanium polyside (a polysilicon layer and a titanium silicide layer) and includes the steps of a first step for anisotropically etching the titanium silicide layer using a plasma containing Cl.sub.2 /N.sub.2 gas, and a second step for anisotropically etching the polysilicon layer using a plasma containing Cl.sub.2 /O.sub.2.

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Derwent abstract--JP 08083756 A, Mar. 26, 1996.
Derwent abstract--JP 0816442 A, Jun. 21, 1996.
Derwent abstract--JP 02244625 A, Sep. 28, 1990.
Derwent abstract--JP 08083788 A, Mar. 26, 1996.

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