Dry etching method for compound semiconductors

Details Dry etching method for compound semiconductors Dry etching method for compound semiconductors

1995-05-10

1997-04-29

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, 438 39, 252 791, H01L 2100

Patent

active

056245297

ABSTRACT:
A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

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