Dry etching method for a gallium nitride type compound semicondu

Details Dry etching method for a gallium nitride type compound semicondu Dry etching method for a gallium nitride type compound semicondu

1996-04-26

1997-12-02

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566621, 252 791, 216 67, H01L 2100

Patent

active

056931808

ABSTRACT:
A dry etching method for etching a gallium nitride type compound semiconductor is disclosed. The method uses a mixed gas including silicon tetrachloride (SiCl.sub.4) gas and chlorine (Cl.sub.2) gas as an etching gas in a reactive ion etching.

REFERENCES:
Peaton et al., "Low bias electron cyclotron resonance plasma etching of GaN, AIN, and InN" Appl. Phys. Lett. (1994) 64(17):2294-2296.
Lin et al., "Reactive ion etching of GaN using BCl.sub.3 " Appl. Phys. Lett (1994) 64(7): 887-888.

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