Dry etching method by sulfur conditioning

Details Dry etching method by sulfur conditioning Dry etching method by sulfur conditioning

1992-02-26

1993-05-18

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, H01L 2100

Patent

active

052117901

ABSTRACT:
A method for anisotropic etching of a layer of a silicon-based material, using an SF.sub.6 gas, a versatile etching gas, is proposed. Sulfur (S) is used as a sidewall protection substance. This sulfur is not supplied into an etching reaction system on discharge dissociation of the etching gas, but is supplied by being sublimed off on heating from the inner wall surface of the etching chamber on which it is previously grown from a gaseous phase. Specifically, the S.sub.2 F.sub.2 gas is introduced while a predetermined region of the inner wall surface of the etching chamber is cooled, and preliminary discharge is carried out to deposit sulfur on the region. A SF.sub.6 containing etching gas is introduced into the chamber and the above mentioned region is heated for subliming S and simultaneously etching the layer of the silicon-based material. With this method, there is no necessity of using a specific etching gas capable of yielding free S in the plasma under discharge dissociating conditions. The present invention has an important significance as post-CFC (chlorofluorocarbon) gas measures. After end of etching, sulfur may be easily sublimed off by heating the wafer without the risk of pollution by particles.

REFERENCES:
patent: 4430547 (1984-02-01), Yonedo et al.
patent: 4975340 (1990-12-01), Suhr et al.
"Plasma Etching of Silicon by Sulfur Hexafluoride"; Wagner et al.; Plasma Chem. Plasma Process., 1(2), abstract; 1981; Wagner et al.
"Disulfur dibromide, disulfur dichloride, and disulfur difluoride: halogen compounds for low-pressure plasma etching"; Electric Phenomena; 1989; Pons et al.

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