Dry etching method and method for prevention of low temperature

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156646, 156657, 1566591, 156662, 20419237, B44C 122, C03C 1500, C03C 2506

Patent

active

049921371

ABSTRACT:
A method of preventing low temperature dry etch deposit on a semiconductor substrate wafer comprises:

REFERENCES:
patent: 4784719 (1988-11-01), Schutz
patent: 4948462 (1990-08-01), Rossen

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dry etching method and method for prevention of low temperature does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching method and method for prevention of low temperature , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching method and method for prevention of low temperature will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-18625

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.