Dry etching method and its application

Details Dry etching method and its application Dry etching method and its application

1992-03-20

1993-08-10

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 156662, 252 791, 359566, B44C 122, H01L 21306, G02B 518

Patent

active

052345378

ABSTRACT:
A dry etching method for etching a surface of a substrate with plasma of mixed gas including i) gas that is reactive to the material of the substrate, and ii) inert gas. Accumulation of reaction products between the substrate and the reactive gas ions on the substrate is effectively eliminated by the ions of the inert gas plasma. Accordingly the etching rate of the substrate is not lowered. Silicon carbide (SiC) is one of the most suitable object of the plasma etching of the present invention, since it is hard to engrave by conventional dry etching methods.

REFERENCES:
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patent: 4131506 (1978-12-01), Namba et al.
patent: 4865685 (1989-09-01), Palmour
patent: 4981551 (1991-01-01), Palmour
patent: 5005075 (1991-04-01), Kobayashi et al.
Chemical Abstracts, vol. 116, No. 12, 1992, No. 116984S, E. Ishiguro et al., "Fabrication and Characterization of Reactive Ion Beam Etched Silicon Carbide Grating", p. 734, Col. 2.
Patent Abstracts of Japan, vol. 5, No. 57, JP-A-56 169 776, Dec. 26, 1981.
Patent Abstracts of Japan, vol. 7, No. 204, JP-A-58 101 428, Jun. 16, 1989.
Patent Abstracts of Japan, vol. 13, No. 195, JP-A-10 015 930, Jan. 10, 1989.

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