Dry Etching method and device therefor

Details Dry Etching method and device therefor Dry Etching method and device therefor

1983-12-12

1985-01-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 204192E, 204298, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

044926103

ABSTRACT:
A dry etching method and device involve induction of a magnetic field having field lines perpendicular to an electric field by magnets which are arranged in the vicinity of a cathode within a reaction chamber, on the surface of the cathode being placed a sample to be etched by a plasma of an etchant gas.

REFERENCES:
patent: 3669861 (1972-06-01), Cash et al.
patent: 3757733 (1973-09-01), Reinberg
patent: 3855612 (1974-12-01), Rosuold
patent: 3968018 (1976-07-01), Lane et al.
patent: 4011143 (1977-03-01), Del Monte et al.
patent: 4094732 (1978-06-01), Reinberg
patent: 4247383 (1981-01-01), Greue et al.
patent: 4312731 (1982-01-01), Morrison
patent: 4384933 (1983-05-01), Takasaki
Vossen, ed., Thin Film Processes, Acedemic Press, New York, N.Y., (1978), pp. 48, 49, 76, 77, 107, 108, 497, 498.
Meckel et al., "Magnetron . . . Materials", Research Disclosure, (10/79), pp. 537-540.
"2400-85 A Planar Magnetron Sputtering System", Perkins-Elmer Ultek Inc., Palo Alto, Ca., (3/77).
Horiike et al., "High-Rate . . . Discharge", Jap. J. of Applied Physics, vol. 20, No. 11, (1981), pp. 817-820.
A catalogue of an apparatus for sale: Tokuda Seisakusho, Ltd.

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