Dry-etching method and apparatus therefor

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156646, 156345, H01L 21306

Patent

active

046683372

ABSTRACT:
A dry-etching method for performing anisotropic etching on a semiconductor substrate by employing an etching gas together with a film-forming gas while irradiating light or an X-ray on the semiconductor substrate. In this method at least one of the etching gas or film-forming gas is excited in a separated chamber before being introduced into an etching chamber. A dry-etching apparatus for performing the above dry-etching method is also proposed.

REFERENCES:
patent: 4123663 (1978-10-01), Horiike
patent: 4183780 (1980-01-01), McKenna et al.
patent: 4529475 (1985-07-01), Okano et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dry-etching method and apparatus therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry-etching method and apparatus therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry-etching method and apparatus therefor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-701788

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.