Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2005-04-19
2005-04-19
Goudreau, George A. (Department: 1763)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S288000, C257S327000, C257S408000
Reexamination Certificate
active
06881991
ABSTRACT:
A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a photomask by forming patterns to be transferred to a wafer on a photomask blank. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
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Aoyama Satoshi
Harashima Noriyuki
Sakamoto Shouichi
Sasaki Takaei
Arent & Fox PLLC
Goudreau George A.
Mitsubishi Denki Kabushiki
Ulvac Coating Corporation
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