Dry etching method

Details Dry etching method Dry etching method

2007-02-20

2007-02-20

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21256

Reexamination Certificate

active

10482405

ABSTRACT:
A dry etching method involves plasma etching an organic anti-reflecting coating film through a mask layer made of photoresist and having a predetermined pattern by using an etching gas of CF4and O2. The method allows an organic anti-reflecting coating film to be etched such that the etched film exhibits a side wall portion having a better shape as compared with that formed by a conventional technique.

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patent: 2000-150486 (2000-05-01), None
patent: 2001-15581 (2001-01-01), None
Takuo Sugano, “Handotai Plasma Process Gijutsu”, SangyoTosho Kabushiki Kaisha, pp. 41-43 Jul. 10, 1980.
M. Nagase et al., “Study of sub-30nm gate Etching Technology”, Proceedings of International Symposium on Dry Process. pp. 17-22 Oct. 20, 2001.

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