Dry etching method

Details Dry etching method Dry etching method

1991-07-29

1994-05-10

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156662, 156664, 156656, 156665, H01L 2100

Patent

active

053104560

ABSTRACT:
A dry etching method enabling layers of a variety of silicon based materials, such as polysilicon layer, single crystal silicon layer, metal silicide layer or a polycide film, and an aluminum based material, to be etched anisotropically without the necessity of employing depositive CFC-based gases. The etching gas is selected from a variety of gases composed mainly of sulfur halogenides, such as S.sub.2 F.sub.2, S.sub.2 Cl.sub.2 or S.sub.2 Br.sub.2. These sulfur halogenides yield halogen radicals as the etchant in the plasma, and a variety of ions assisting the radical reaction, while yielding free sulfur S, as a result of dissociation by electrical discharge. Free sulfur then is deposited on the sample wafer etched to display the effect of sidewall protection, while the wafer is controlled to a temperature lower than room temperature. According to the present invention, since sulfur yielded in the gaseous phase is used for sidewall protection, anisotropic processing becomes possible even with a system in which, by reason of the construction of the etching mask, the carbon based polymer derived from the resist material may not be expected to by yielded. The deposited sulfur may be easily removed by sublimation by proper heating the wafer after completion of etching.

REFERENCES:
patent: 4462863 (1984-07-01), Nishimatsu et al.
patent: 4473436 (1984-09-01), Beinvogl
patent: 4592800 (1986-06-01), Landau et al.
patent: 4711698 (1987-12-01), Douglas
patent: 4943344 (1990-07-01), Tachi et al.
patent: 4956043 (1990-09-01), Kanetomoto et al.
patent: 4983543 (1991-01-01), Sato et al.
patent: 5147500 (1992-09-01), Tachi et al.
"Disulfur dibromide, disulfur dichloride, and disulfur difluoride:halogen compounds for low pressure plasma etching"; Ons et al.; 76-11; Electric Phenomena; 1989; abstract.
"Plasma Etching of Siticon by Sulfur hexafluoride mass spectrometric study of the discharge products"; Wagner et al.; Plasma Chem. Plasma Processes; 1(2); 201-15; abstract, 1981.

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