Dry etching method

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156646, 156657, 156345, H01L 2100

Patent

active

053565150

ABSTRACT:
A dry etching method which includes supplying a workpiece having an oxide portion or a nitride portion into a processing vessel, keeping said workpiece at temperatures not higher than 0.degree. C. within said processing vessel, supplying an etching gas including a first gas containing a halogen element and a second gas containing carbon having an oxidation number of less than 4 and oxygen to a region in the vicinity of the workpiece while keeping the temperature the workpiece at a level not higher than 0.degree. C., and forming a plasma of said etching gas for etching the oxide portion or the nitride portion of the workpiece with said plasma.

REFERENCES:
patent: 4582581 (1986-04-01), Flanigan et al.
patent: 5147500 (1992-09-01), Tachi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dry etching method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2370034

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.