Dry etching method

Details Dry etching method Dry etching method

1991-07-25

1993-07-27

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 1566591, 1566611, 156668, B44C 100

Patent

active

052307727

ABSTRACT:
A dry etching method for suppressing the micro-loading effects at the time of etching of the resist material layer through utilization of the competitive process of the deposition of the etching reaction product and removal by sputtering. For example, if a novolak based positive type photoresist is etched using an NH.sub.3 gas with the wafer temperature being maintained at 70.degree. C. or lower, reaction products at lower vapor pressure containing elements of C, O and N are produced in the etching region. In the broader etching region, the reaction products are deposited in a larger quantity than in the narrower region. The etching rate is lowered to the extent that the etchant is consumed for removing these deposited reaction products by sputtering. The result is the averaged etching rate in the wafer surface irrespective of the size of the etching region. Excess overetching becomes unnecessary as a result of suppression of the micro-loading effects.

REFERENCES:
patent: 4855017 (1989-08-01), Douglas
patent: 4992136 (1991-02-01), Tachi et al.
patent: 5024722 (1991-06-01), Cathey, Jr.
Tsujimoto et al, "Low-Temperature Microwave Plasma Etching", 1988 Dry Process Symposium, pp. 42-49.
Kawakami et al, "Low Temperature Etching of Photoresist", Paper 1p-L-15, Extended Abstracts (The 36th Spring Meeting 1989) The Japan Society of Applied Physics and Related Societies, p. 579.

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