Dry etching method

Details Dry etching method Dry etching method

1992-03-30

1995-03-28

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 156643, 156646, 156653, H01L 2100

Patent

active

054013585

ABSTRACT:
Proposed is a method for achieving an improved etchrate and exceedingly low damage in a so-called digital etching technique consisting of etching a sample wafer on the level of a monatomic layer. The present invention covers the following three main aspects, namely (a) formation of dangling bonds on the surface of a sample wafer and adsorption of etchants to the sample wafer for formation of a surface reaction layer, followed by elimination of the surface reaction layer by irradiation of a charged beam, (b) adsorption of etchants followed by formation and elimination of a surface reaction layer by neutral beam irradiation, and (c) formation of dangling bonds and adsorption of etchants to the sample wafer for formation of a surface reaction layer, followed by elimination of the surface reaction layer by irradiation of a neutral beam. With (a), high etchrate may be achieved because the wafer surface may be activated by the dangling bonds and the formation of the surface reaction layer may be promoted. With (b), although kinetic energies of the neutral beam is donated to the etchants, the effect by charges is nil, so that radiation damages may be avoided. With (c), the effects (a) and (b) are summed together so that high etchrate and low damages may be simultaneously achieved. Satisfactory results could be obtained on application of the present invention to etching of a single crystal silicon substrate and selective etching of an SiO.sub.2 /SiN.sub.x system.

REFERENCES:
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"Atomic Layer Controlled Digital Etching of Silicon"; Sakaue et al.,-Journal of Applied Physics; 29(11); pp. 2648-2652; Sakaue et al.; 1990.
"Lower Plasma-Induced Damage In SiO/Si at Lower Temperature"; Mizutani et al.; 1990; Appl. Phys. Lett 57(16); pp. 1654-1656.
"Highly Selective Etching of Silicon Nitride (Si.sub.3 N.sub.4) to Silicon Dioxide Employing Fluorine and Chlorine Atoms Generated By Microwave Discharge"; Suto et al.; J. Electrochom. Soc., 136 (7); abstract only; 1989.

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