Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-09-01
1995-03-28
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156628, 156655, 1566591, 156662, 156345, 437234, H01L 213065, B44C 122
Patent
active
054013577
ABSTRACT:
A method may be used to dry etch a sample including a plurality of regions different from each other in the photo-absorption of a light having a specified wavelength using an etching gas plasma. The method is capable of selectively etching the desired material from a plurality of materials having different types of band gap energies or from a plurality of materials having different band gap energies. The method includes a step of irradiating a light having the specified wavelength on the sample for reducing an etching rate of a region having a large photo-absorption coefficient to the light, thereby selectively etching a region having a small photo-absorption coefficient to the light.
REFERENCES:
patent: 4648938 (1987-03-01), Ashby et al.
patent: 4678536 (1987-07-01), Murayama et al.
patent: 4880493 (1989-11-01), Ashby et al.
patent: 5092957 (1992-03-01), Ashby et al.
Ehrlich, Laser-induced microscopic etching of GaAs and InP, Appl. Phys. Lett. 36(8), 15 Apr. 1980, pp. 698-700.
Hikosaka, Kohki; Mimura, Takashi and Joshin, Kazukiyo, "Selective Dry Etching of AlGaAs-GaAs Heterojunction", Japanese Journal of Applied Physics, vol. 20, No. 11, Nov. 1981, pp. L847-L850.
IBM Technical Disclosure Bulletin, vol. 23, No. 3, Aug. 1980, R. T. Hodgson: Method of Etching Undoped Regions of a Substrate Without Masking.
IEEE Electron Device Letters, vol. 13, No. 2, Feb. 1992, New York, US, pp. 105-107; Kuroda et al.: Highly Uniform N-InAlAs/InGaAs HEMT's on a 3-in InP Substrate Using Photochemical Selective Dry Recess Etching.
Electronics Letters, vol. 27, No. 23, 7 Nov. 1991, Enage, GB, pp. 2113-2115; Kosugi et al.: Selective Photochemical Dry Etching of GaAs/AlGaAs and InGaAs/InAlAs Heterostructures.
Hiraoka Susumu
Masuda Hiroshi
Mitani Katsuhiko
Mori Mitsuhiro
Nakatsuka Shin'ichi
Hitachi , Ltd.
Powell William A.
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