Dry etching method

Details Dry etching method Dry etching method

1991-10-03

1992-06-02

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156656, 156662, 156664, H01L 2100

Patent

active

051183870

ABSTRACT:
A method for anisotropic etching of a polycide film without using chlorofluorocarbon (CFC) gas. If the polycide film is etched using a S.sub.2 F.sub.2 /HBr gas mixture, as the temperature of a sample wafer is controlled to be not higher than room temperature, sulfur yielded in a plasma on dissociation due to electric discharge of S.sub.2 F.sub.2 is also deposited besides SiBr.sub.x which is a reaction product of etching. The result is that, even if the amount of SiBr.sub.x is diminished during over etching, sidewall protection may be sustained due to the presence of sulfur, so that no undercuts are produced in the lower polysilicon layer. Alternatively, the SF.sub.8 /HBr gas mixture may be used up to so-called just-etching if the gas composition is switched to H.sub.2 S/HBr for overetching. In such case, a high etchrate may be achieved during just-etching, while high anisotropy may be achieved during overetching due to progress of capturing of excess Br* by H* and deposition of sulfur.

REFERENCES:
patent: 4778563 (1988-10-01), Stone
patent: 4784720 (1988-11-01), Douglas
patent: 4799991 (1989-01-01), Dockrey
patent: 4818334 (1989-04-01), Shwartzman et al.
patent: 4997520 (1991-03-01), Jucha et al.
patent: 5013398 (1991-05-01), Long et al.

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