Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-01-22
1993-12-07
Hearn, Brian E.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156643, 156646, 156653, H01L 2100
Patent
active
052680703
ABSTRACT:
A dry etching method for silicon trench etching in which high anisotropy, high etchrate and low pollution may be achieved simultaneously. A single crystal silicon substrate is etched using a gas mixture of S.sub.2 Cl.sub.2 and S.sub.2 F.sub.2 while a wafer is cooled to about -70.degree. C. Etching proceeds by a mechanism in which a radical reaction by Cl* derived from S.sub.2 Cl.sub.2 and F* derived from S.sub.2 F.sub.2 is assisted by the incident energy of S.sup.+, SF.sup.+, SCl.sup.+ or Cl.sup.+ ions. The highly reactive F* radicals of a small atomic radius contribute to increasing the etchrate. Deposition of sulfur yielded from S.sub.2 Cl.sub.2 and S.sub.2 F.sub.2 provides for efficient sidewall protection to achieve high anisotropy. The conventional practice to add fluorine based gases with a view to increasing the etchrate is in need of an excess quantity of a deposition material to give rise to increased pollution by particles. There is no risk of pollution with the sulfur deposit according to the present invention because the sulfur deposit may easily be sublimed off by heating the wafer.
REFERENCES:
patent: 4807016 (1989-02-01), Douglas
Kadomura Shingo
Nagayama Tetsuji
Goudreau George
Hearn Brian E.
Sony Corporation
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