Dry etching method

Details Dry etching method Dry etching method

1996-04-24

1998-03-31

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438726, 438728, 216 59, 216 60, 216 69, 216 70, H01L 2100

Patent

active

057338205

ABSTRACT:
Silicon material layers formed on an oxide underlayer are attached using a plasma including a gas mixture of a halogen and oxygen. Intensities of first emissions from the plasma at a first wavelength and second emissions from the plasma at a second wavelength are measured. A ratio of the first emissions intensity to the second emissions intensity is determined. The selectivity of silicon layers to oxide underlayers is measured for various conditions of the plasma under which the emissions intensity ratio is obtained. A correlation between the emissions intensity ratio and the selectivity is then established for various etching parameters. A plasma condition to obtain a desired selectivity may then be appropriately set using the established correlation.

REFERENCES:
patent: 4430151 (1984-02-01), Tsukada
patent: 4472237 (1984-09-01), Deslauriers et al.
patent: 5234526 (1993-08-01), Chen et al.
patent: 5245157 (1993-09-01), Ohiwa
patent: 5374327 (1994-12-01), Imahashi et al.

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