Dry etching method

Details Dry etching method Dry etching method

1994-03-17

1994-11-22

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, H01L 2100

Patent

active

053665902

ABSTRACT:
Disclosed herein is a method of dry-etching SiO.sub.2 layers and Si.sub.3 N.sub.4 layers with high selectivity. The dry etching method employs a fluorocarbon (FC) gas represented by the formula C.sub.x F.sub.y (where y<x+2) in a dry-etching system capable of generating a high-density plasma having an ion density higher than 10.sup.11 /cm.sup.3. The high-density plasma (such as ECR plasma) promotes the dissociation of gas to a great extent and hence effectively forms CF.sup.+ ions even from C.sub.6 F.sub.6 gas. (In the prior-art technology that employs an RF plasma, C.sub.6 F.sub.6 gas merely deposits carbon polymers.) The CF.sup.+ ions permits the rapid etching of the SiO.sub.2 interlayer insulating film. The FC gas has such a high C/F ratio that it does not form excess F* radicals. Hence it provides high selectivity for the Si.sub.3 N.sub.4 underlying film. If it is used for the etching of the SiO.sub.2 layer using the Si.sub.3 N.sub.4 layer as a mask, it provides high selectivity for the mask.

REFERENCES:
patent: 4162185 (1979-07-01), Coburn et al.
patent: 4180432 (1979-12-01), Clark
patent: 5286344 (1994-02-01), Blalock et al.
"Reactive Ion Etching of Silicon and Silicon Dioxide In CF.sub.4 Plasmas Containing H.sub.2 or C.sub.2 F.sub.4 Additives"; J. Electrochem. Soc.; vol. 138, No. 9; Sep. 1991; Simko et al.; pp. 2748-2752.

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