Dry etching method

Details Dry etching method Dry etching method

1992-01-31

1993-06-08

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, H01L 2100

Patent

active

052175707

ABSTRACT:
A dry etching method for etching an aluminum (Al) based layer for effectively combatting the after-corrosion in accordance with three aspects. In the first aspect, while a resist mask and chlorine based gas as known per se are used, S.sub.2 F.sub.2 is used during etching of the barrier metal layer. In this manner, residual chlorine in a carbonaceous polymer as a sidewall protection material or a resist mask is replaced by fluorine, whilst sulfur yielded from S.sub.2 F.sub.2 under conditions of discharge dissociation is deposited to provide for sidewall protection effects. In the second aspect, a SiO.sub.2 mask and an S.sub.2 Cl.sub.2 etching gas are used. Since the sidewall protection material is solely sulfur yielded from S.sub.2 Cl.sub.2, it becomes possible to avoid the effects of the residual chlorine. In the third aspect, an neutral Ar beam is irradiated at a suitable stage in the etching process for increasing the resistance of the SiO.sub.2 mask against reducing compounds contained in an etching gas for the layer of the aluminum-based material. By irradiation of the neutral beam, a reduction-resistant layer is produced on the surface of the SiO.sub.2 mask to render it possible to reduce the mask thickness without producing problems such as increased step differences on the wafer surface.

REFERENCES:
patent: 5126008 (1992-06-01), Levy
"Semiconductor Technology for VLSI*Plasma Etching and High Pressure Oxidation", Konrad; 1981; Electric Phenomena, 76-4.

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