Dry etching method

Details Dry etching method Dry etching method

1988-03-30

1992-02-25

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 156662, 156664, 156665, 156666, C23F 100

Patent

active

050910507

ABSTRACT:
A dry etching method of etching a material to be etched including a transition metal using an etching gas including a carbon oxide gas is provided. The carbon oxide gas may be carbon monoxide gas, carbon dioxide gas, or mixtures of these gases. The carbon oxide gas is preferably in accordance with the relationship "R=X/3 to 200X" where "X" is the ratio of the number of transition metal atoms to the total number of metal atoms and "R" is the ratio of the number of molecules of oxide of carbon to the number of halogen atoms. Such a dry etching is particularly preferably carried out when the material to be etched is aluminum-silicon alloy, the transition metal is copper, the etching gas is mixed gas of chlorine gas, boron trichloride gas and helium gas, and the carbon oxide gas is carbon monoxide.

REFERENCES:
patent: 4412885 (1983-11-01), Wang et al.
patent: 4505782 (1985-03-01), Jacob et al.
patent: 4618398 (1986-10-01), Nawata et al.
patent: 4659426 (1987-04-01), Fuller et al.
Broydo, "Important Considerations in Selecting Anisotropic Plasma Etching Equipment," Solid State Technology, Apr. 1983, pp. 159-165.
Schaible et al., "Preferential Lateral Chemical Etching in Reactive Ion Etching of Aluminum and Aluminum Alloys," J. Vac. Sci. Technol., 16(2), Mar./Apr. 1979, pp. 377-380.
Downey et al., "Introduction to Reactive Ion Beam Etching," Solid State Technology, Feb. 1981, pp. 121-127.

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