Dry etching method

Details Dry etching method Dry etching method

1993-03-11

1995-08-29

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

216 67, 216 79, H01L 2100

Patent

active

054457122

ABSTRACT:
A dry etching method for etching an SiO.sub.2 based material layer with a high etchrate, high selectivity, low damage, and pollution is disclosed. An etching gas containing a high-order fluorocarbon compound and an oxyhalogen compound is used. A main etchant is CF.sub.X.sup.+ dissociated in a large amount from the high-order fluorocarbon compound. On the other hand, the oxyhalogen compound, which has in a molecule one polarity functional group selected from carbonyl, thionyl, sulfuryl, nitrosyl, and nitryl, has the following effects: (1) a reduction in a deposit amount of carbonaceous polymer necessary for securing selectivity, by increasing chemical bond intensity, polymerization degree, and polarity of carbonaceous polymer derived from decomposition products of a resist mask; and (2) an increase in the etchrate by extracting O atoms from SiO.sub.2 by reducive radicals such as SO.sup.* and NO.sup.* derived from the polarity functional group. For improving selectivity to an Si based underlying layer, it is effective to increase the content ratio of the oxyhalogen compound in an overetching process, or to use a sulfur based compound as well which is capable of producing a sulfur based deposit such as S.sub.2 F.sub.2.

REFERENCES:
"Plasma Etching of Si and SiO.sub.2 --The Effect of Oxygen Additions to CF.sub.4 Plasmas", Mogat et al.; vol. 15; No. 2; Apr.-1978; Proceedings of the 24th National Symposium of The American Voluum Society; abstract only.
"Decomposition and Product Formation in CF.sub.4 /O.sub.2 Plasma Etching Silicon in the Afterglow"; J. Appl. Phys., vol. 52; No. 1; Jan. 1981; Beenakker et al.; pp. 480-485.
"The Plasma Oxidation of CF.sub.4 in a Tubular-Alumina Fast-Flow Reactor"; J. Appl. Phys.; vol. 50; No. 7; Jul. 1979; pp. 4982-4987; Smolinsky et al..
"Plasma Etching of Si and SiO.sub.2 in SF.sub.6 -O.sub.2 Mixtures"; J. Appl. Phys., vol. 52, No. 1; pp. 162-167; 1981; D'Agostino et al.

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