Dry etching method

Details Dry etching method Dry etching method

1992-04-24

1994-11-08

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156345, H01L 2100

Patent

active

053623614

ABSTRACT:
A dry etching method for anisotropic etching of target material layers at low temperature without using CFC-based gases whereby excessive sidewall protection effects are inhibited and etching reproducibility is improved. In dry etching using S.sub.2 F.sub.2, sidewalls are protected by depositing sulfur (S) dissociated in plasma on the sidewalls. However, the sulfur thus formed will also deposit on the inside wall of an etching chamber, increasing with time the S/F ratio of an etching reaction system. To prevent this, a first heater is used to heat the lower inside wall of a bell jar of an magnetically-enhanced microwave plasma etching apparatus during etching. Then, a second heater and a third heater are used to heat the outer periphery of a wafer supporting electrode and the exposed portion of a cooling pipe, respectively, so that the atmosphere in the bell jar is kept clean with an appropriate S/F ratio. Thus, the present invention uses sulfur deposition to allow highly reproducible etching of Si-based material layers, silicon compound material layers, and aluminum-based material layers.

REFERENCES:
patent: 4430547 (1989-02-01), Yoneda et al.
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4911812 (1990-03-01), Kudo et al.
patent: 4943344 (1990-07-01), Tachi et al.
patent: 5085750 (1992-02-01), Soraoka et al.
patent: 5147500 (1992-09-01), Tachi et al.
"D.C. Plasma Etching of Silicon by Sulfur Hexafluoride Mass Spectrometric Study of Gas Discharge Products"; Plasma Chem. Plasma Proc. 1(2); 201-15; 1981; Wagner et al.; (Abstract only).

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