Dry etching method

Details Dry etching method Dry etching method

1996-09-13

1999-11-30

Dang, Thi

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438696, 438717, 438720, H01L 21302

Patent

active

059942266

ABSTRACT:
A dry etching method for a conductive material layer is disclosed. The dry etching method has the steps of: forming an oxygen-containing antireflection film on a surface of a conductive material layer; forming a patterned mask layer on the antireflection film; forming a sidewall protection film on a sidewall of the mask layer; and etching the conductive material layer using the mask layer having the sidewall protection film formed thereon. The sidewall protection film is formed after the antireflection film is patterned using the mask layer. The antireflection film is patterned after the sidewall protection film is formed, with the sidewall protection film left on the sidewall of the antireflection film. The sidewall protection film is formed by using at least one of sulfur based compound and sulfur nitride based compound. The antireflection film is composed of an SiON based material. The conductive material layer is composed of a material selected from the group consisting of a polycide film, an Al based alloy material layer, a Cu based alloy material layer and a refractory metal layer. The conductive material layer is formed on a semiconductor substrate having an insulating film formed on a surface thereof. The conductive material layer is formed on an insulating film having a barrier metal layer formed on a surface thereof.

REFERENCES:
patent: 5207868 (1993-05-01), Shinohara
patent: 5217570 (1993-06-01), Kadomura
patent: 5236549 (1993-08-01), Shirakawa et al.
patent: 5266157 (1993-11-01), Kadomura
patent: 5268070 (1993-12-01), Nagayama et al.
patent: 5277757 (1994-01-01), Sato
patent: 5326431 (1994-07-01), Kadomura
patent: 5369053 (1994-11-01), Fang
patent: 5391244 (1995-02-01), Kadomura
patent: 5436205 (1995-07-01), Hirose
Patent Abstract of Japanese Published Application 4-330724 of Nov. 18, 1992, Patent Abstracts of Japan, vol. 17, No. 174, (E-1349) Apr. 5, 1993.

Affiliated with

Also associated with

Rating

Dry etching method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1671930