Dry etching method

Details Dry etching method Dry etching method

1992-02-14

1994-08-30

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156660, 156643, 156646, 156653, 430 5, H01L 2100

Patent

active

053424816

ABSTRACT:
A method for effecting anisotropic etching of a layer of a material without producing dimensional loss even if the photoresist is of a reverse tapered cross-sectional profile is proposed. A photoresist produced from a chemical amplification negative type photoresist tends to be of a reversely tapered cross-sectional profile after development due to its sensitization properties. According to the present invention, discharge reaction products yielded in a plasma are deposited on an inclined sidewall surface of a photoresist pattern for trimming or shaping the sidewall surface so that the sidewall surface will be substantially vertical. For example, Si.sub.x N.sub.y, Si.sub.x N.sub.y Cl.sub.z, etc. may be deposited from a SiCl.sub.4 /N.sub.2 mixed gas, sulfur may be deposited from a mixed gas of S.sub.2 F.sub.2 /H.sub.2 S and a carbonaceous polymer may be deposited from a C.sub.2 Cl.sub.3 F.sub.3 gas. Such profile correction may be effected before etching the layer, or simultaneously with the etching under conditions in which the deposition process occurs competitively with the etching process. According to the present invention, dimensional loss may be prevented effectively from occurring during the etching of a layer of an Si-based material or an Al-based material in which the radical mode is a prevailing etching mode.

REFERENCES:
patent: 5091342 (1992-02-01), Studebaker et al.
patent: 5139925 (1992-08-01), Hartney
patent: 5177773 (1993-01-01), Oizumi et al.
patent: 5188706 (1993-02-01), Hori et al.

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