Dry etching method

Details Dry etching method Dry etching method

1985-02-11

1986-10-21

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 156665, 20419235, 252 791, 427 39, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

046183981

ABSTRACT:
The present invention is concerned with a dry-etching method wherein a gaseous mixture of boron trichloride, chlorine and a hydrocarbon, to be used as an etching gas, is converted into plasma to etch aluminum or its alloys with ions or radicals formed thereby. The invention makes it possible to accomplish the anisotropic etching of aluminum or its alloys at high speeds with a low RF power density.

REFERENCES:
patent: 4372807 (1983-02-01), Vossen et al.
patent: 4511429 (1985-04-01), Mizutani et al.

Affiliated with

Also associated with

Rating

Dry etching method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1288415