Dry etching method

Details Dry etching method Dry etching method

1996-07-15

1997-11-11

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 1566621, H01L 2100

Patent

active

056859503

ABSTRACT:
A dry etching method is disclosed in which a first polysilicon layer is etched, using an ECR plasma of an etching gas containing a bromine-based gas and a rare gas, as a sidewall protective film is formed by a deposit mainly composed of SiBr, for forming a tapered gate electrode. Since SiBr.sub.x is efficiently generated by a radical reaction of Br.sup.* assisted by an ion-assist mechanism by the rare gas, and has a long residence time under a low gas pressure, it can be deposited efficiently on a patterned sidewall surface. Since the sidewall protective film produced with the present dry etching method, is free of SiO.sub.x, particle contamination may be diminished. Since post-processing of a shorter time duration suffices for removing the sidewall protective film, erosion of the gate insulating film is not produced. Thus the semiconductor device having the fine multi-layer interconnection structure may be improved in reliability and yield.

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patent: 5318665 (1994-06-01), Oikawa

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