Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-05-28
1993-11-09
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156626, 156652, 156656, 156657, 1566591, 156662, 156345, 252 791, H01L 21306, B44C 122, C23F 100, C03C 1500
Patent
active
052599230
ABSTRACT:
A dry etching method, wherein a multilayer film including one selected from tungsten, molybdenum, and a silicide thereof, as the first layer, and polycrystal silicon as the second layer underlying is formed on a silicon oxide insulation film, a substrate having a mask pattern on the multilayer film is placed in a vacuum container, an etching gas is introduced into the vacuum container, and an electrical discharge is induced by applying an electrical field to the vacuum container, thereby anisotropically etching the multilayered film in accordance with the mask pattern. The method comprises the first etching step for etching the first layer by use of the first gas selected from fluorine, sulfur hexafluoride, and nitrogen trifuoride, or a mixture gas containing the first gas and the second gas selected from hydrogen chloride, hydrogen bromide, chlorine, bromine, and carbon tetrachloride, as an etching gas, and the second etching step for etching the second layer by use of the second gas, or a mixture gas containing the second gas and the third gas selected from an inert gas, nitrogen gas, oxygen gas, silicon tetrachloride gas and carbon monoxide gas, as an etching gas.
REFERENCES:
patent: 4713141 (1987-12-01), Tsang
patent: 5094712 (1992-03-01), Becker et al.
patent: 5110408 (1992-05-01), Fujii et al.
patent: 5169487 (1992-12-01), Langley et al.
patent: 5180464 (1993-01-01), Tatsumi et al.
Plasma Chemistry and Plasma Processing, vol. 5, No. 3, Sep., 1985, A. Picard, et al., "Plasma Etching of Refractory Metals (W,Mo,Ta) and Silicon in SF.sub.6 and SF.sub.6 -O.sub.2 an Analysis of the Reaction Products".
Hiratsuka Masahito
Hori Masaru
Horioka Keiji
Ishikawa Yoshio
Ito Masao
Powell William A.
Tokyo Electron Limited
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